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FPM (Fast Page Mode) DRAM was the most common form of DRAM available in the early years of the PC marketplace. To access information, the Page Mode process provides a constant RAS (Row Address Strobe) signal. At the same time, it allows the CAS (Column Address Strobe) signal to maneuver to different locations. The process acquires data from columns sharing the same row, without the need to constantly specify the row location in each access. By acquiring rows or pages of information this way, the operation resulted in a lower memory access time and a reduction in power consumption. Overall, it was a major improvement over its predecessors.
EDO (Extended Data Out) devices had a further advantage over the FPM memories. A typical FPM device turns off the data output buffer at the rising edge of the CAS signal, so reading information would no longer be possible (please see the DRAM Data Array diagram for more details). EDO devices are somewhat (~25%) more efficient because they allow the read process to extend past the point of CAS going high.
| DRAM | About SRAM |
| About DRAM | About Flash Memory |
| About EDO/FPM | About Embedded Memory |
| About SDRAM | About Optical Memory |
| About DDR | |
| About Rambus | |
| About FCRAM |
Other articles in this series:
How to repair RAM
Selecting a memory tester
Types of Memory
Memory Sources
How to test memory
Quality of Memory - Remarked versus marked, brand name vs no name
What is the SPD and how to program it
Evolution of memory